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 FFP15S60S — STEALTH? II Diode ?2007 Fairchild Semiconductor Corporation FFP15S60S Rev. C1 www.fairchildsemi.com 1 FFP15S60S 15 A, 600 V, STEALTH? II Diode Features ? Stealth Recovery Trr = 35 ns (@ I F = 15 A) ? Max Forward Voltage, VF = 2.6 V (@ T C = 25°C) ? 600V Reverse Voltage and High Reliability Applications ? General Purpose ? SMPS ? Boost Diode in Continuous Mode Power Factor Corrections ? Power Switching Circuits The FFP15S60S is a STEALTH? II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Absolute Maximum Ratings TC = 25oC unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Rating Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ T C = 123 oC 15 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 150 A TJ, TSTG Operating and Storage Temperature Range -65 to +150 oC Symbol Parameter Max. Unit RθJC Maximum Thermal Resistance, Junction to Case 1.3 oC/W 1. Cathode 2. Anode 1. Cathode 2. Anode TO-220-2L ? Improved dv/dt Capability ? RoHS Compliant Part Nu mber Top Mark Package Packing Method Reel Size Tape W idth Quantity FFP15S60STU FFP15S60S TO-220-2L Tube N/A N/A 50 Description November 2013 |